DocumentCode :
3609097
Title :
Numerical Simulation of Plasma Oscillation in 2-D Electron Gas Using a Periodic Steady-State Solver
Author :
Sung-Min Hong ; Jae-Hyung Jang
Author_Institution :
Sch. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Volume :
62
Issue :
12
fYear :
2015
Firstpage :
4192
Lastpage :
4198
Abstract :
The terahertz oscillation due to the plasma instability in the 2-D electron gas is numerically investigated using an in-house developed device simulator, G-Device. In order to overcome practical difficulties in the conventional transient simulation, a periodic steady-state (PSS) solver is implemented. The full Newton-Raphson scheme is applied to a set of discretized equations sampled at various time points during an oscillation period. Numerical results show that there is a threshold value of the injection velocity that allows the PSS oscillation. Moreover, the impact of the drain load resistance on the oscillation amplitude is estimated. It is found that considerable amplitude of the voltage oscillation can be achieved even with finite drain resistances. Although the growth rate of the voltage oscillation exhibits its maximum value with the infinite drain resistance, the maximum output power is obtained at a finite drain resistance.
Keywords :
Newton-Raphson method; electron gas; high electron mobility transistors; plasma instability; plasma oscillations; plasma simulation; 2D electron gas; G-Device; PSS oscillation; conventional transient simulation; device simulator; discretized equations; drain load resistance; full Newton-Raphson scheme; growth rate; infinite drain resistance; injection velocity; maximum output power; numerical simulation; oscillation amplitude; oscillation period; periodic steady-state solver; plasma instability; plasma oscillation; terahertz oscillation; time points; voltage oscillation; HEMTs; III-V semiconductor materials; Plasma waves; Semiconductor device modeling; Terahertz radiation; Transient analysis; III-V semiconductor device; III???V semiconductor device; plasma waves; semiconductor device modeling; terahertz (THz) radiation; terahertz (THz) radiation.;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2489220
Filename :
7308033
Link To Document :
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