Title :
Theory of Superjunction With NFD and FD Modes Based on Normalized Breakdown Voltage
Author :
Wentong Zhang ; Bo Zhang ; Zehong Li ; Ming Qiao ; Zhaoji Li
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A new relationship between the specific ON-resistance RON and breakdown voltage VB for the balanced symmetric superjunction (SJ) device is presented to produce the lowest RON for a given VB. The design formulas, including the doping density NW and the drift length Ld, are given for both the nonfull depletion (NFD) and the full depletion SJ devices with an introduction of the normalized VB factor η. For the NFD SJ MOSFET, an RON ∝ V1.03 B relationship is obtained. The analytical results show good agreement with the numerical results.
Keywords :
MOSFET; doping; semiconductor device breakdown; NFD SJ MOSFET; NFD modes; balanced symmetric superjunction device; doping density; full depletion SJ devices; nonfull depletion modes; normalized breakdown voltage; superjunction theory; Breakdown voltage; Doping; Electric breakdown; Electric potential; MOSFET; PIN photodiodes; Resistance; Full depletion (FD) mode; nonfull depletion (NFD) mode; normalized breakdown voltage; specific ON-resistance; superjunction (SJ); superjunction (SJ).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2491360
