Theory of Superjunction With NFD and FD Modes Based on Normalized Breakdown Voltage

Author

Wentong Zhang ; Bo Zhang ; Zehong Li ; Ming Qiao ; Zhaoji Li

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

62

Issue

12

fYear

2015

Firstpage

4114

Lastpage

4120

Abstract

A new relationship between the specific ON-resistance R_ON and breakdown voltage V_B for the balanced symmetric superjunction (SJ) device is presented to produce the lowest R_ON for a given V_B. The design formulas, including the doping density NW and the drift length L_d, are given for both the nonfull depletion (NFD) and the full depletion SJ devices with an introduction of the normalized V_B factor η. For the NFD SJ MOSFET, an R_ON ∝ V1.03 B relationship is obtained. The analytical results show good agreement with the numerical results.

Keywords

MOSFET; doping; semiconductor device breakdown; NFD SJ MOSFET; NFD modes; balanced symmetric superjunction device; doping density; full depletion SJ devices; nonfull depletion modes; normalized breakdown voltage; superjunction theory; Breakdown voltage; Doping; Electric breakdown; Electric potential; MOSFET; PIN photodiodes; Resistance; Full depletion (FD) mode; nonfull depletion (NFD) mode; normalized breakdown voltage; specific ON-resistance; superjunction (SJ); superjunction (SJ).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2491360

Filename

7312473