Atomistic Modeling of Suspended Carbon Nanotube Field Effect Transistors Under Proton Radiation

Author

LaGasse, Samuel W. ; Cress, Cory D. ; Hughes, Harold L. ; Ji Ung Lee

Author_Institution

Coll. of Nanoscale Sci. & Eng., SUNY Polytech. Inst., Albany, NY, USA

Volume

62

Issue

6

fYear

2015

Firstpage

2881

Lastpage

2887

Abstract

We present an atomistic model explaining spontaneous reductions of source-drain current in suspended carbon nanotube field effect transistors (CNT FETs) under proton irradiation. The non-equilibrium Green´s function (NEGF) method is used to investigate the local density of states (LDOS) and transfer characteristics of the device. Our model suggests that ionized gas species within 20 nm of the CNT FET will act as an electrostatic gate, reducing current in the device for low back-gate voltages.

Keywords

Green´s function methods; carbon nanotube field effect transistors; field effect transistors; ionisation; radiation effects; semiconductor device models; C; CNT FET; LDOS; NEGF method; atomistic modeling; back-gate voltages; electrostatic gate; ionized gas species; local density of states; nonequilibrium Green´s function method; proton irradiation; size 20 nm; source-drain current; suspended carbon nanotube field effect transistors; Carbon nanotubes; Field effect transistors; Green´s function methods; Ions; Mathematical model; Proton radiation effects; Carbon nanotube; field effect transistor (FET); non-equilibrium Green’s function (NEGF); quantum transport; transient effects;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2015.2478002

Filename

7312514