DocumentCode :
3609558
Title :
Silicon on insulator pressure sensor based on a thermostable electrode for high temperature applications
Author :
Liu, G.D. ; Cui, W.P. ; Hu, H. ; Zhang, F.S. ; Zhang, Y.X. ; Gao, C.C. ; Hao, Y.L.
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China
Volume :
10
Issue :
10
fYear :
2015
Firstpage :
496
Lastpage :
499
Abstract :
A high temperature silicon on insulator pressure sensor utilising a Ti/TiN/Pt/Au electrode is presented for improving the thermal stability of ohmic contacts, which can work stably at high temperatures of up to 500°C. To analyse the characteristics of the electrode at high temperatures, a special test structure is measured using the linear transmission line method and Auger electron spectroscopy. To solve the measurement problem, a novel calibration setup is designed to calibrate the absolute pressure sensor at extremely high temperatures. The measurement results have shown that the pressure sensor has a nonlinearity error of 0.17%FS and a sensitivity of 0.24 mV/kPa with a measurement range of 30-150 kPa at 500°C, indicating the good thermal stability of the ohmic contacts.
Keywords :
Auger electron spectra; calibration; electrodes; elemental semiconductors; gold; measurement errors; ohmic contacts; platinum; pressure sensors; silicon; silicon-on-insulator; thermal stability; titanium; titanium compounds; transmission lines; Auger electron spectroscopy; Si; Ti-TiN-Pt-Au; calibration; high temperature applications; linear transmission line method; nonlinearity error; ohmic contacts; pressure 30 kPa to 150 kPa; sensitivity; silicon on insulator pressure sensor; temperature 500 degC; thermal stability; thermostable electrode;
fLanguage :
English
Journal_Title :
Micro Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl.2015.0181
Filename :
7312570
Link To Document :
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