• DocumentCode
    3609608
  • Title

    Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High- k /Metal Gate CMOS Process

  • Author

    Chun-Yu Lin ; Pin-Hsin Chang ; Rong-Kun Chang

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Normal Univ., Taipei, Taiwan
  • Volume
    15
  • Issue
    4
  • fYear
    2015
  • Firstpage
    633
  • Lastpage
    636
  • Abstract
    The impact of pickup structure on electrostatic discharge (ESD) robustness of multifinger MOSFET in 28-nm high- κ/metal gate CMOS process was investigated in this paper. Verified in silicon, the multifinger MOSFET without the pickup structure inserted into its source region can sustain the higher ESD level and more compact layout area.
  • Keywords
    MOSFET; electrostatic discharge; ESD robustness; electrostatic discharge; high-k-metal gate CMOS process; inner pickup impact; multifinger MOSFET; size 28 nm; Electrostatic discharges; High K dielectric materials; Layout; Logic gates; MOSFET; Robustness; Stress; Electrostatic discharge (ESD); MOSFET; layout; pickup;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2015.2496364
  • Filename
    7312970
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3609608