DocumentCode :
3609608
Title :
Impact of Inner Pickup on ESD Robustness of Multifinger MOSFET in 28-nm High- 
/Metal Gate CMOS Process
Author :
Chun-Yu Lin ; Pin-Hsin Chang ; Rong-Kun Chang
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Normal Univ., Taipei, Taiwan
Volume :
15
Issue :
4
fYear :
2015
Firstpage :
633
Lastpage :
636
Abstract :
The impact of pickup structure on electrostatic discharge (ESD) robustness of multifinger MOSFET in 28-nm high- κ/metal gate CMOS process was investigated in this paper. Verified in silicon, the multifinger MOSFET without the pickup structure inserted into its source region can sustain the higher ESD level and more compact layout area.
Keywords :
MOSFET; electrostatic discharge; ESD robustness; electrostatic discharge; high-k-metal gate CMOS process; inner pickup impact; multifinger MOSFET; size 28 nm; Electrostatic discharges; High K dielectric materials; Layout; Logic gates; MOSFET; Robustness; Stress; Electrostatic discharge (ESD); MOSFET; layout; pickup;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2015.2496364
Filename :
7312970
Link To Document :
