Title :
Waveguide Mode Formation as a Potential Cause of Switch Failure in High-Power Wide-Bandgap Photoconductive Switches
Author :
Wolfe, Timothy ; Francis, Ashley ; Langley, Derrick ; Petrosky, James C. ; Roos, Jason ; Terzuoli, Andrew ; Zens, Timothy
Author_Institution :
Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA
Abstract :
The integration of photoconductive semiconductor switches (PCSSs) into pulsed power systems may have improvements over conventional switching, but failure modes occurring near the illuminated edge of PCSS devices between switching operations present a serious limiting factor. While these failure modes have previously been difficult to characterize, this paper proposes a theory for a potential contributing source of failure supported by observations derived from the results of an FDTD simulation on an optically excited semiconductor switch. A computational analysis combining both solid-state and electromagnetic physical models reveals what appears to be an unintentional waveguide-like behavior in the optically excited plasma-filled PCSS device in strong agreement with the documented observations in the experiment. The net effect of nonuniform charge carrier generation as a result of waveguide-like mode formation is theoretically assessed, and the additional areas of investigation into this pivotal problem area in the PCSS design are suggested.
Keywords :
finite difference time-domain analysis; plasma boundary layers; plasma filled waveguides; plasma sources; plasma switches; wide band gap semiconductors; FDTD simulation; computational analysis; edge illumination; electromagnetic physical models; high-power wide-bandgap photoconductive switches; nonuniform charge carrier generation; optically excited plasma-filled PCSS device; optically excited semiconductor switch; photoconductive semiconductor switche integration; pulsed power systems; solid-state models; waveguide-like mode formation; Charge carrier processes; Charge carriers; High power microwave generation; Photoconductivity; Semiconductor device breakdown; Wide band gap semiconductors; Charge carrier processes; charge carriers; high power microwave generation; photoconductivity; power semiconductor switches; semiconductor device breakdown; wide band gap semiconductors; wide band gap semiconductors.;
Journal_Title :
Plasma Science, IEEE Transactions on
DOI :
10.1109/TPS.2015.2490042