A Reactively Matched 1.0–11.5 GHz Hybrid Packaged GaN High Power Amplifier

An ultra-wideband PA using a single GaN die with resistive and reactive matching is fabricated and measured. The design includes series and shunt elements at the gate for stability and gain compensation, and uses two different substrates to obtain optimum Z 0 ranges for the matching networks. CW measurements at 31 dBm source power show 27-48% PAE and 35.1-37.4 dBm output power from 1.0 to 11.5 GHz (168% relative bandwidth). These results demonstrate multi-watt output power and high PAE over a decade bandwidth, achieving the best results in this frequency range for a hybrid implementation.