DocumentCode
3609975
Title
High-Precision Wafer-Level Cu–Cu Bonding for 3-DICs
Author
Sugaya, Isao ; Okada, Masashi ; Mitsuishi, Hajime ; Maeda, Hidehiro ; Shimoda, Toshimasa ; Izumi, Shigeto ; Nakahira, Hosei ; Okamoto, Kazuya
Author_Institution
Nikon Corp., Yokohama, Japan
Volume
62
Issue
12
fYear
2015
Firstpage
4154
Lastpage
4160
Abstract
A high-precision Cu-Cu bonding system for 3-D ICs (3-DICs) fabrication adopting a new precision alignment methodology is proposed. A new pressure profile control system is applied in the thermocompression bonding process. Experimental results show that the alignment capability is 250 nm or better, with similar overlay accuracy (|average| + 3σ) for permanent bonding. These developments are expected to contribute to the fabrication of future 3-DICs.
Keywords
integrated circuit bonding; tape automated bonding; three-dimensional integrated circuits; wafer bonding; 3DIC fabrication; Cu-Cu; alignment methodology; high-precision wafer-level copper-copper bonding system; overlay accuracy; permanent bonding; pressure profile control system; thermocompression bonding process; Bonding; CMOS integrated circuits; Copper; Wafer scale integration; 3-D IC (3-DIC); thermocompression bonding; wafer-to-wafer (W2W); wafer-to-wafer (W2W).;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2015.2493238
Filename
7322198
Link To Document