DocumentCode :
3610046
Title :
Parametric study of 1310 nm ridge waveguide AlGaInAs-InP semi-conductor laser dynamics
Author :
Cantu?Œ??, Horacio I. ; McKee, Andrew ; Eddie, Iain ; Kelly, Anthony E.
Author_Institution :
CST-Global Ltd., Hamilton, UK
Volume :
9
Issue :
6
fYear :
2015
Firstpage :
341
Lastpage :
347
Abstract :
Dynamic performance of directly modulated Fabry-Pérot lasers is presented in this work subject to variation of parameters such as cavity length and facet reflectivity. This study is focused on the effect that physical parameters have on the slope of the laser resonance frequency against the square root of the injection current. Temperature variation is also studied to determine modulation bandwidth available for high speed device operation at 10 Gbps. The effect of facet reflectivity and temperature over the laser spectrum and wavelength is also discussed.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; laser cavity resonators; optical modulation; reflectivity; ridge waveguides; semiconductor lasers; thermo-optical effects; waveguide lasers; AlGaInAs-InP; bit rate 10 Gbit/s; cavity length; directly modulated Fabry-Pérot lasers; facet reflectivity; high speed device operation; injection current; laser resonance frequency; laser spectrum; laser wavelength; modulation bandwidth; ridge waveguide semiconductor laser dynamics; temperature effects; temperature variation; wavelength 1310 nm;
fLanguage :
English
Journal_Title :
Optoelectronics, IET
Publisher :
iet
ISSN :
1751-8768
Type :
jour
DOI :
10.1049/iet-opt.2015.0011
Filename :
7322400
Link To Document :
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