Title :
All-Oxide Inverters Based on ZnO Channel JFETs With Amorphous ZnCo2O4 Gates
Author :
Klupfel, Fabian Johannes ; Holtz, Agnes ; Schein, Friedrich-Leonhard ; von Wenckstern, Holger ; Grundmann, Marius
Author_Institution :
Fak. fur Phys. und Geowissenschaften, Univ. Leipzig, Leipzig, Germany
Abstract :
We present integrated inverter circuits based on junction FETs (JFETs) with ZnO channels and amorphous ZnCo2O4 gate contacts. The inverters reach high gain values up to 276 and uncertainty ranges down to 0.3 V for an operating voltage of 3 V. The magnitude of the gain is traced back theoretically to the slope of the JFET saturation current. The use of a level shifter is demonstrated, in order to obtain full inverters, which can be integrated into logic circuits.
Keywords :
JFET integrated circuits; invertors; logic circuits; zinc compounds; ZnCo2O4; all-oxide inverters; amorphous gates; channel JFET; integrated inverter circuits; junction FET; level shifter; logic circuits; voltage 3 V; II-VI semiconductor materials; Inverters; JFETs; Zinc oxide; Inverter; junction FET (JFET); oxide electronics; zinc cobaltite (ZnCo₂O₄); zinc cobaltite (ZnCo2O4); zinc oxide (ZnO); zinc oxide (ZnO).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2493361
