• DocumentCode
    3610078
  • Title

    All-Oxide Inverters Based on ZnO Channel JFETs With Amorphous ZnCo2O4 Gates

  • Author

    Klupfel, Fabian Johannes ; Holtz, Agnes ; Schein, Friedrich-Leonhard ; von Wenckstern, Holger ; Grundmann, Marius

  • Author_Institution
    Fak. fur Phys. und Geowissenschaften, Univ. Leipzig, Leipzig, Germany
  • Volume
    62
  • Issue
    12
  • fYear
    2015
  • Firstpage
    4004
  • Lastpage
    4008
  • Abstract
    We present integrated inverter circuits based on junction FETs (JFETs) with ZnO channels and amorphous ZnCo2O4 gate contacts. The inverters reach high gain values up to 276 and uncertainty ranges down to 0.3 V for an operating voltage of 3 V. The magnitude of the gain is traced back theoretically to the slope of the JFET saturation current. The use of a level shifter is demonstrated, in order to obtain full inverters, which can be integrated into logic circuits.
  • Keywords
    JFET integrated circuits; invertors; logic circuits; zinc compounds; ZnCo2O4; all-oxide inverters; amorphous gates; channel JFET; integrated inverter circuits; junction FET; level shifter; logic circuits; voltage 3 V; II-VI semiconductor materials; Inverters; JFETs; Zinc oxide; Inverter; junction FET (JFET); oxide electronics; zinc cobaltite (ZnCo₂O₄); zinc cobaltite (ZnCo2O4); zinc oxide (ZnO); zinc oxide (ZnO).;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2015.2493361
  • Filename
    7323825
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3610078