A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique

Author

Raffo, Antonio ; Avolio, Gustavo ; Vadala, Valeria ; Schreurs, Dominique M. M.-P ; Vannini, Giorgio

Author_Institution

Dept. of Eng., Univ. of Ferrara, Ferrara, Italy

Volume

25

Issue

12

fYear

2015

Firstpage

841

Lastpage

843

Abstract

We extend the recently proposed dynamic-bias measurement technique to the identification of non-quasi-static FET models. In particular, we propose to exploit two high-frequency tickles superimposed on the low-frequency large-signal excitation. The tickle frequencies are chosen in order to separately extract the quasi-static and non-quasi-static model parameters. As case study, we extracted and validated the model of an 800×0.35-μm² GaAs pHEMT.

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; microwave transistors; semiconductor device measurement; semiconductor device models; GaAs; dynamic bias measurement technique; nonquasistatic FET model extraction; pHEMT; signal excitation; size 0.35 mum; size 800 mum; Field effect transistors; Microwave FETs; Microwave measurement; Semiconductor device measurement; Dynamic bias; FETs; non-quasi-static models; nonlinear measurements; nonlinear models; semiconductor device measurements;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2015.2496794

Filename

7330035