Title :
Compact Thermal Failure Model for Devices Subject to Electrostatic Discharge Stresses
Author :
Yuanzhong Zhou ; Meng Miao ; Salcedo, Javier A. ; Hajjar, Jean-Jacques ; Liou, Juin J.
Author_Institution :
Corp. Electrostatic Discharge Dept., Analog Devices, Inc., Wilmington, MA, USA
Abstract :
A leading cause of device failure under electrostatic discharge stress conditions is thermal failure. This failure occurs as a result of excessive energy dissipation which raises the temperature of the device to a critical breaking level. To predict such a physical failure at circuit level, a compact model compatible with circuit simulators is proposed. The model is derived from the fundamental heat transfer equations and is shown to accurately predict thermal failure for arbitrary electrical stress waveforms.
Keywords :
electrostatic discharge; heat transfer; semiconductor device models; thermal stress cracking; arbitrary electrical stress waveforms; compact thermal failure model; device failure; electrostatic discharge stress conditions; energy dissipation; fundamental heat transfer equations; physical failure; Circuit simulation; Energy dissipation; Heat transfer; Circuit simulation; compact model; electrostatic discharge (ESD); junction thermal failure; thermal network; transmission line pulsing (TLP);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2491223
