A Highly Linear Low Noise Amplifier With Wide Range Derivative Superposition Method

Author

Wei Gao ; Zhiming Chen ; Zicheng Liu ; Wei Cui ; Xiaoyan Gui

Author_Institution

Beijing Inst. of Technol., Beijing, China

Volume

25

Issue

12

fYear

2015

Firstpage

817

Lastpage

819

Abstract

This letter presents an L-band highly linear differential low noise amplifier (LNA) in a standard 90-nm CMOS process. A wide range derivative superposition technique is proposed to maximize the third-order intercept point (IP3), and at the same time, minimize the third-order intermodulation distortion (IMD3) over a wide input power range. The LNA chip achieves a measured OIP3 of +33.7 dBm and IMD3 of -65 dBc with -15 dBm input power. The measured peak gain and minimum noise figure are 15.4 dB and 1.36 dB at 1.27 GHz, respectively. The LNA chip consumes 40 mA from a 3.3-V supply.

Keywords

CMOS integrated circuits; intermodulation distortion; low noise amplifiers; microwave amplifiers; CMOS process; IMD3; IP3; L-band; LNA chip; current 40 mA; frequency 1.27 GHz; gain 15.4 dB; linear differential low noise amplifier; size 90 nm; third-order intercept point; third-order intermodulation distortion; voltage 3.3 V; wide range derivative superposition method; CMOS integrated circuits; CMOS technology; Linearity; Low-noise amplifiers; Noise measurement; Power measurement; Transistors; CMOS; IMD3; high linearity; large-signal nonlinearity; low noise amplifier (LNA); third-order derivative cancellation;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2015.2496793

Filename

7331676