DocumentCode :
3610881
Title :
Epitaxial growth of graphene thin film by pulsed laser deposition
Author :
Jin Wang ; Zhengwei Xiong ; Jian Yu ; Hongbu Yin ; Xuemin Wang ; Liping Peng ; Yuying Wang ; Xinmin Wang ; Tao Jiang ; Linhong Cao ; Weidong Wu ; Chuanbin Wang ; Lianmeng Zhang
Author_Institution :
State Key Lab. of Adv. Technol. for Mater. Synthesis & Process., Wuhan Univ. of Technol., Wuhan, China
Volume :
10
Issue :
11
fYear :
2015
Firstpage :
649
Lastpage :
652
Abstract :
Epitaxial graphene films have been prepared by pulsed laser deposition. X-ray photoelectron spectroscopy analysis shows that the carbon binding energy is 284.7 eV, corresponding to sp2-C. Raman spectroscopy indicates that there exists 2D and D peaks and thus graphene structures have been formed. Meanwhile, according to high-resolution transmission electron microscopy analysis, suitable depositing temperature for graphene films is found to be 873 K and the single oriented crystal domains of graphene are observed only with the condition of 100 pulses laser.
Keywords :
Raman spectra; X-ray photoelectron spectra; graphene; pulsed laser deposition; thin films; transmission electron microscopy; vapour phase epitaxial growth; C; HRTEM; Raman spectroscopy; X-ray photoelectron spectroscopy; XPS; carbon binding energy; depositing temperature; epitaxial growth; graphene thin film; high-resolution transmission electron microscopy; pulsed laser deposition; single oriented crystal domains; temperature 873 K;
fLanguage :
English
Journal_Title :
Micro Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl.2015.0047
Filename :
7331759
Link To Document :
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