Title :
Application of a Pulsed Laser to Identify a Single-Event Latchup Precursor
Author :
Roche, N.J.-H. ; Khachatrian, A. ; Buchner, S. ; Foster, Charles C. ; Ferlet-Cavrois, V. ; Muschitiello, M. ; Miller, F. ; Morand, S. ; Warner, J. ; Decker, T. ; McMorrow, D.
Author_Institution :
George Washington Univ., Washington, DC, USA
Abstract :
Focused, pulsed laser-light is used to investigate single-event latchup in an analog-to-digital converter (AD9240) through the generation of charge collection spectra and their dependence on bias, laser pulse intensity and strike location. Large bipolar single-event transients were identified as precursors to latchup. They occurred at bias voltages just below the latchup holding voltage and in regions that became sensitive to single-event latchup at voltages above the holding voltage. Charge collection spectra obtained from spatial scans involving the pulsed laser had features similar to those obtained from heavy-ion irradiation. Both approaches indicated enhanced charge collection at supply voltages just below the holding voltage.
Keywords :
analogue-digital conversion; pulsed laser deposition; radiation hardening (electronics); bias voltages; charge collection spectra; heavy-ion irradiation; latchup holding voltage; pulsed laser-light; single-event latchup precursor; spatial scans; Analog-digital conversion; CMOS integrated circuits; Laser applications; Single event transients; Transient analysis; Analog-to-digital converter; heavy ions; laser; latchup; single events;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2015.2498280