• DocumentCode
    3611203
  • Title

    Improved high-frequency output equivalent circuit modelling for MOSFETs

  • Author

    Seoyoung Hong ; Seonghearn Lee

  • Author_Institution
    Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin, South Korea
  • Volume
    51
  • Issue
    24
  • fYear
    2015
  • Firstpage
    2045
  • Lastpage
    2047
  • Abstract
    An improved MOSFET output equivalent circuit model is proposed to greatly reduce the Y22-parameter error of a conventional one in the high-frequency range more than 10 GHz. In this model, a new parallel RC network is connected in series with the drain-source capacitance to model the ac current crowding phenomenon due to the vertically distributed RC effect in the saturation region. Its accuracy is clearly validated by finding much better agreement up to 40 GHz between measured and modelled Y22-parameter than the conventional one.
  • Keywords
    MOSFET; RC circuits; equivalent circuits; microwave field effect transistors; semiconductor device models; AC current crowding phenomenon; MOSFET; Y-parameter error; drain-source capacitance; high-frequency output equivalent circuit modelling; metal oxide semiconductor field effect transistor; parallel RC network; vertically distributed RC effect;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2015.2946
  • Filename
    7335709
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3611203