Title :
Improved high-frequency output equivalent circuit modelling for MOSFETs
Author :
Seoyoung Hong ; Seonghearn Lee
Author_Institution :
Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin, South Korea
Abstract :
An improved MOSFET output equivalent circuit model is proposed to greatly reduce the Y22-parameter error of a conventional one in the high-frequency range more than 10 GHz. In this model, a new parallel RC network is connected in series with the drain-source capacitance to model the ac current crowding phenomenon due to the vertically distributed RC effect in the saturation region. Its accuracy is clearly validated by finding much better agreement up to 40 GHz between measured and modelled Y22-parameter than the conventional one.
Keywords :
MOSFET; RC circuits; equivalent circuits; microwave field effect transistors; semiconductor device models; AC current crowding phenomenon; MOSFET; Y-parameter error; drain-source capacitance; high-frequency output equivalent circuit modelling; metal oxide semiconductor field effect transistor; parallel RC network; vertically distributed RC effect;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2015.2946
