Tunable directional coupler for RF front-end applications

Author

Solomko, V. ; Tanc, B. ; Kehrer, D. ; Ilkov, N. ; Bakalski, W. ; Simbu?Œ?†rger, W.

Author_Institution

RF & Sensors, Infineon Technol. AG, Neubiberg, Germany

Volume

51

Issue

24

fYear

2015

Firstpage

2012

Lastpage

2014

Abstract

A tunable directional coupler for radio frequency (RF) front-ends of handheld mobile devices is presented. The coupler is implemented in a 0.13 μm bulk RF-CMOS technology with all elements monolithically integrated on a single die. A digitally-tuned termination network at the isolated port of the coupler is realised solely with RF-switch transistors using the channel resistance of a metal-oxide-semiconductor (MOS) device. The fine-tuned termination network allows the coupler to achieve a directivity of over 25 dB in the whole cellular frequency range from 699 MHz up to 2.7 GHz. The worst-case insertion loss in the transmitted path is 0.15 dB at 2.7 GHz.

Keywords

CMOS integrated circuits; MIS devices; UHF transistors; directional couplers; mobile radio; switches; MOS device; RF-switch transistors; bulk RF-CMOS technology; channel resistance; digitally-tuned termination network; fine-tuned termination network; frequency 699 MHz to 2.7 GHz; handheld mobile devices; isolated port; loss 0.15 dB; metal oxide semiconductor device; radiofrequency front ends; single die; size 0.13 mum; tunable directional coupler;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2015.2601

Filename

7335748