DocumentCode
3611419
Title
Electrical design of through silicon via (lee, m., et al; 2014) [book review]
Author
Orlandi, Antonio
Volume
4
Issue
3
fYear
2015
Firstpage
33
Lastpage
33
Abstract
This is a very interesting and well written book on a hot topic nowadays in signal and power integrity: the study of three dimensional integrated circuits (3D IC) with particular emphasis on the analysis and design of Through Silicon Vias (TSV). TSV, in very basic terms, is a metal pillar inside the silicon (Si) wafer with a silicon oxide coating (???liner???) to block the DC leakage current between the metal pillar and the silicon wafer.
Keywords
Book reviews; Coatings; Integrated circuits; Silicon; Three-dimensional displays; Through-silicon vias;
fLanguage
English
Journal_Title
Electromagnetic Compatibility Magazine, IEEE
Publisher
ieee
ISSN
2162-2264
Type
jour
DOI
10.1109/MEMC.2015.7336692
Filename
7336692
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