• DocumentCode
    3611638
  • Title

    Monolithic Fabrication of Silicon Nanowires Bridging Thick Silicon Structures

  • Author

    Tasdemir, Zuhal ; Peric, Oliver ; Sacchetto, Davide ; Fantner, Georg Ernest ; Leblebici, Yusuf ; Alaca, B. Erdem

  • Author_Institution
    Department of Mechanical Engineering, Ko?‚???‚?? University, Istanbul, Turkey
  • Volume
    1
  • fYear
    2015
  • fDate
    7/7/1905 12:00:00 AM
  • Firstpage
    2
  • Lastpage
    5
  • Abstract
    A monolithic process is developed for the fabrication of Si nanowires within thick Si substrates. A combination of anisotropic etch and sidewall passivation is utilized to protect and release Si lines during the subsequent deep etch. An etch depth of 10~\\mu text{m} is demonstrated with a future prospect for 50 \\mu text{m} opening up new possibilities for the deterministic integration of nanowires with microsystems. Nanowires with in-plane dimensions as low as 20 nm and aspect ratios up to 150 are obtained. Nanomechanical characterization through bending tests further confirms structural integrity of the connection between nanowires and anchoring Si microstructures.
  • Keywords
    Fabrication; Micromechanical devices; Microstructures; Nanostructures; Nanowires; Passivation; Silicon; Atomic force microscopy (AFM); bending test; silicon nanowires; single crystal reactive etching and metallization (SCREAM);
  • fLanguage
    English
  • Journal_Title
    Nanotechnology Express, IEEE
  • Publisher
    ieee
  • Type

    jour

  • DOI
    10.1109/XNANO.2015.2469312
  • Filename
    7343005
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3611638