DocumentCode :
3611740
Title :
Correction to “Comprehensive Methodology for the Statistic of SRAM Vmin” [Sep 15 289-297]
Author :
Pompl, Thomas ; Strasser, Rudolf ; Drexl, Stefan ; Ostermayr, Martin
Volume :
15
Issue :
4
fYear :
2015
Firstpage :
638
Lastpage :
638
Abstract :
Presents corrections to, ???Comprehensive methodology for the statistic of SRAM Vmin,??? (Pompl, T. et al, IEEE Trans. Device Mater. Rel., vol. 15, no. 3, pp. 289???297, Sep. 2015).
Keywords :
Dielectric breakdown; SRAM chips; Statistical analysis;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2015.2498241
Filename :
7343821
Link To Document :
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