Title :
Hydrogen Limits for Total Dose and Dose Rate Response in Linear Bipolar Circuits
Author :
Adell, Philippe C. ; Rax, Bernard ; Esqueda, Ivan S. ; Barnaby, Hugh J.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Soaked-hydrogen irradiations show the H2 limits for the total-dose and dose-rate response of bipolar technologies. We use an analytical model to extrapolate experimental observations and generate an H2 limits/dose-rate safe-operating-area for various total-dose conditions. Results indicate that 0.1% is the H2 limit that can impact device degradation. We also show that the impact is larger for higher dose levels and that extra care needs to be taken when qualifying electronics for specific missions.
Keywords :
bipolar analogue integrated circuits; hydrogen; H; hydrogen limits; linear bipolar circuits; soaked-hydrogen irradiations; Bipolar integrated circuits; Degradation; Hydrogen; Radiation effects; Semiconductor device packaging; Transistors; Bipolar; ELDRS; hydrogen contamination; packaging; total dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2015.2500198
