Title :
Effects of Proton-Induced Displacement Damage on Gallium Nitride HEMTs in RF Power Amplifier Applications
Author :
Ives, Nathan E. ; Jin Chen ; Witulski, Arthur F. ; Schrimpf, Ronald D. ; Fleetwood, Daniel M. ; Bruce, Ralph W. ; McCurdy, Michael W. ; En Xia Zhang ; Massengill, Lloyd W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA
Abstract :
The effects of proton-induced displacement damage in GaN HEMTs on circuit-level RF power amplifier parameters such as circuit gain, stability, and RF output power are presented. The results are explained based on the device-level degradation. Commercial-off-the-shelf GaN HEMTs from two manufacturers were compared. Differences are observed in both device and circuit level responses. Suggestions to mitigate the negative effects of displacement damage on GaN based amplifiers are also provided.
Keywords :
HEMT integrated circuits; III-V semiconductors; gallium compounds; protons; radiofrequency power amplifiers; wide band gap semiconductors; GaN; HEMT; RF power amplifier; device-level degradation; proton-induced displacement damage; Gallium nitride; HEMTs; Power semiconductor devices; Protons; Radiation effects; Radio frequency; Gallium nitride; HEMT; RF; S-parameters; power semiconductor devices; proton; radiation effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2015.2499160
