Single Event Upset Sensitivity of D-Flip Flop of Infrared Image Sensors for Low Temperature Applications Down to 77 K

Author

Artola, L. ; Hubert, G. ; Gilard, O. ; Ducret, S. ; Perrier, F. ; Boutillier, M. ; Garcia, P. ; Vignon, G. ; Baradat, B. ; Ricard, Nicolas

Author_Institution

ONERA, French Aerosp. Lab., Toulouse, France

Volume

62

Issue

6

fYear

2015

Firstpage

2979

Lastpage

2987

Abstract

This paper presents for the first time the impact of cryogenic temperatures, down to 77 K, on the SEU sensitivity of D-Flip-Flop (DFF) of infrared image sensor. Estimations and a failure analysis at circuit level are presented and investigated considering the stored data configuration and the temperature. The comparisons with experimental data obtained under heavy ion at UCL are presented and consistent. A good correlation of SEU cross sections is revealed. A saturation effect is observed below 200 K.

Keywords

cryogenic electronics; flip-flops; infrared imaging; ion beam effects; radiation hardening (electronics); D-flip flop; cryogenic temperatures; heavy ion; infrared image sensor; low temperature applications; single event upset sensitivity; Cryogenics; Flip-flops; Infrared image sensors; Integrated circuit modeling; Sensitivity; Single event transients; Single event upsets; Space vehicles; Temperature sensors; DFF; SET; heavy ions; infrared image sensors; low temperatures; modeling; single event transient;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2015.2499316

Filename

7347467