Schottky Diode Derating for Survivability in a Heavy Ion Environment

Author

Casey, Megan C. ; Lauenstein, Jean-Marie ; Ladbury, Raymond L. ; Wilcox, Edward P. ; Topper, Alyson D. ; LaBel, Kenneth A.

Author_Institution

NASA/GSFC, Greenbelt, MD, USA

Volume

62

Issue

6

fYear

2015

Firstpage

2482

Lastpage

2489

Abstract

In this paper, we irradiate a number of silicon power Schottky diodes from a variety of manufacturers. The tested diodes represent a wide assortment of reverse voltages and forward currents. Additionally, we review correlations between single-event failures in Schottky diodes and device electrical parameters. The spatial locations of failures in the diode are discussed, as well as a possible explanation for why the failures occur. Based on these correlations to date, we propose a derating scheme for Schottky diodes flown in a heavy ion environment and suggest screening procedures for decreasing the risks of such failures.

Keywords

Schottky diodes; power semiconductor diodes; radiation hardening (electronics); semiconductor device reliability; silicon; Schottky diode derating; Si; heavy ion environment survivability; power Schottky diodes; single event failures; Radiation effects; Radiation hardening (electronics); Schottky diodes; Silicon; Defects; Schottky diodes; diodes; heavy ion testing; heavy ions; radiation effects; radiation effects in devices; radiation hardness assurance; radiation hardness assurance testing; semiconductor device radiation effects; silicon; single-event burnout; single-event charge collection; single-event effects;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2015.2498106

Filename

7348746