Title :
Electron-Induced Single-Event Upsets in 45-nm and 28-nm Bulk CMOS SRAM-Based FPGAs Operating at Nominal Voltage
Author :
Gadlage, Matthew J. ; Roach, Austin H. ; Duncan, Adam R. ; Savage, Mark W. ; Kay, Matthew J.
Author_Institution :
NAVSEA Crane, Crane, IN, USA
Abstract :
Electron-induced single-event upsets (SEUs) are observed in 45-nm and 28-nm bulk complementary metal-oxide semiconductor static random-access memory-based field-programmable gate arrays (FPGAs) operating at nominal voltage at a 20-MeV electron LINAC facility. Upsets are recorded in the embedded random-access memory (RAM) and configuration RAM of the FPGAs. This paper is the first to show electron-induced SEUs in a commercial-off-the-shelf device operating at nominal voltage. The measured electron-induced SEU cross sections are between 10 - 18 and 10 - 17 cm2/bit depending on the device and memory cell tested. Monte Carlo simulations show that the upsets are due to rare indirect ionization events.
Keywords :
CMOS memory circuits; Monte Carlo methods; SRAM chips; field programmable gate arrays; radiation hardening (electronics); CMOS SRAM based FPGA; LINAC facility; Monte Carlo simulations; SEU; complementary metal-oxide semiconductor; electron induced single event upsets; electron volt energy 20 MeV; memory cell; size 28 nm; size 45 nm; static random-access memory-based field-programmable gate arrays; Field programmable gate arrays; Monte Carlo methods; Radiation effects; Random access memory; Single event upsets; Field-programmable gate arrays (FPGAs); radiation effects in ICs; single-event upset (SEU); static random-access memories (SRAMs);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2015.2491220
