Title :
Estimation of Single-Event-Induced Collected Charge for Multiple Transistors Using Analytical Expressions
Author :
Assis, T.R. ; Ni, K. ; Kauppila, J.S. ; Bhuva, B.L. ; Schrimpf, R.D. ; Massengill, L.W. ; Wen, S. ; Wong, R. ; Slayman, C.
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
Abstract :
The ambipolar-diffusion-with-cutoff (ADC) model is extended to estimate the single-event-induced collected charge for multiple transistors for circuits simulation. The proposed improvement in the model includes both parasitic-bipolar and charge-sharing effects for a given technology. Simulation results indicate excellent agreement between the proposed model and published TCAD data for 130, 90, 65, and 40 nm technology nodes. A comparison between ADC and both rectangular parallelepiped (RPP) and integral rectangular parallelepiped (IRPP) models indicates a 2.7 × and 2.5 × lower error in estimating collected charge when compared with TCAD data. The ADC average error was estimated to be 7.1 fC and for the RPP and IRPP about 19.1 fC and 17.5 fC, respectively, across the technologies for particles with the linear energy transfer range from 1 - 30 MeV-cm2/mg.
Keywords :
bipolar transistors; radiation hardening (electronics); semiconductor device models; ADC model; IRPP; TCAD; ambipolar diffusion with cutoff model; charge-sharing effects; integral rectangular parallelepiped; multiple transistors; parasitic-bipolar effects; single event induced collected charge; size 130 nm; size 40 nm; size 65 nm; size 90 nm; Circuit simulation; MOSFET; Reliability; Ambipolar-diffusion-with-cutoff (ADC); charge sharing; collected charge; integral rectangular parallelepiped (IRPP); metal–oxide semiconductor field-effect transistor (MOSFET); rectangular parallelepiped (RPP); reliability; single-event modeling; soft error modeling;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2015.2492418
