Sub-Micron Resolution of Localized Ion Beam Induced Charge Reduction in Silicon Detectors Damaged by Heavy Ions

Author

Auden, Elizabeth C. ; Pacheco, Jose L. ; Bielejec, Edward ; Vizkelethy, Gyorgy ; Abraham, John B. S. ; Doyle, Barney L.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

62

Issue

6

fYear

2015

Firstpage

2919

Lastpage

2925

Abstract

Displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keV Si ^{+ +} ions focused in a 40 nm beam spot are used to create damage cascades within 0.25 μm² areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of 200 keV Si ^{+ +} ions and 60 keV Li⁺ ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.

Keywords

electron-hole recombination; ion beam effects; silicon radiation detectors; Shockley-Read-Hall recombination; Si; beam spot; damage cascades; displacement damage; electron volt energy 200 keV; electron volt energy 60 keV; focused ion beams; heavy ions; localized ion beam induced charge reduction; silicon detector; size 40 nm; submicron resolution; Ion beam effects; Ion beams; Radiation effects; Silicon radiation detectors; Displacement damage; IBIC; ion beam induced charge; silicon detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2015.2495160

Filename

7348780