Title :
Radiation Effects in CCD on CMOS Devices: First Analysis of TID and DDD Effects
Author :
Marcelot, O. ; Goiffon, V. ; Raine, M. ; Duhamel, O. ; Gaillardin, M. ; Molina, R. ; Magnan, P.
Author_Institution :
Image Sensor Res. Team, Univ. de Toulouse, Toulouse, France
Abstract :
As CMOS image sensors become more and more attractive and with high performances, it becomes possible to use CCD on CMOS devices with reasonable lengths. However, no study has been done on the radiation hardness of such CCD on CMOS devices. Therefore, we propose in this paper a first study of Charge Transfer Inefficiency (CTI) and dark current degradation under TID and DDD irradiations. To do so, test chips have been processed in conventional deep submicron CMOS imaging technologies, and characterized before and after irradiations.
Keywords :
CMOS image sensors; charge-coupled devices; radiation hardening (electronics); CCD; CMOS device; CMOS image sensor; DDD Effect; TID Effect; charge transfer inefficiency; dark current degradation; radiation effect; radiation hardness; time delay integration; CMOS image sensors; Charge coupled devices; Charge transfer; Radiation effects; CMOS image sensors (CIS); Charge; charge coupled devices; charge transfer; deep submicrometer process; radiation effects; transfer inefficiency; trapped charge;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2015.2497405
