DocumentCode
3611904
Title
Charge Collection Mechanisms of Ge-Channel Bulk 
MOSFETs
Author
Samsel, Isaak K. ; En Xia Zhang ; Sternberg, Andrew L. ; Kai Ni ; Reed, Robert A. ; Fleetwood, Daniel M. ; Alles, Michael L. ; Schrimpf, Ronald D. ; Linten, Dimitri ; Mitard, Jerome ; Witters, Liesbeth ; Collaert, Nadine
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Volume
62
Issue
6
fYear
2015
Firstpage
2725
Lastpage
2731
Abstract
Single-event transients in SiGe MOS devices with ultrathin quantum well channels have been shown in previous work to exhibit opposite polarities for source and drain strikes. This work reports polarity reversal in similar devices with thick Ge channels due to the favorability of prompt hole collection by either the source or drain region, depending on the strike location. A slower charge-collection mechanism is also present due to the n-well/ p-substrate structure, which allows ion-generated carriers from the substrate to flood the body of the device.
Keywords
Ge-Si alloys; MOSFET; ionisation; quantum well devices; radiation hardening (electronics); semiconductor device testing; MOS devices; SiGe; bulk pMOSFET; charge collection mechanisms; ion-generated carriers; n-well-p-substrate structure; single-event transients; ultrathin quantum well channels; Germanium; MOS devices; MOSFET; Quantum wells; Silicon germanium; Single event transients; Charge collection; germanium; silicon-germanium; single-event effect; single-event transient;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2015.2489020
Filename
7348810
Link To Document