Title :
A Novel 65 nm Radiation Tolerant Flash Configuration Cell Used in RTG4 Field Programmable Gate Array
Author :
Jih-Jong Wang ; Rezzak, Nadia ; Dsilva, Durwyn ; Jia, James ; Cai, Alex ; Hawley, Frank ; McCollum, John ; Hamdy, Esmat
Author_Institution :
Microsemi-SOC, San Jose, CA, USA
Abstract :
The newly introduced radiation-tolerant flash-based FPGA, RTG4, uses a novel configuration cell design composed of a NMOS switch controlled by a totem pole p-channel flash and n-channel flash construction. Its radiation tolerance is far superior to that in the present available Flash-based FPGA. This paper describes the radiation hardening by design (RHBD) process for the new flash-based configuration cell. A subtle and unique retention issue was found and resolved through studying physical mechanisms and conducting experiments.
Keywords :
MOS integrated circuits; field programmable gate arrays; radiation hardening (electronics); FPGA; NMOS switch; RTG4 field programmable gate array; n-channel flash; radiation hardening by design; radiation tolerant flash configuration cell; size 65 nm; totem pole p-channel flash; Field programmable gate arrays; Radiation hardening (electronics); Field programmable gate array; N-flash; P-flash; total ionizing dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2015.2495262
