• DocumentCode
    3611919
  • Title

    Analyzing the Effectiveness of a Frame-Level Redundancy Scrubbing Technique for SRAM-based FPGAs

  • Author

    Tonfat, Jorge ; Lima Kastensmidt, Fernanda ; Rech, Paolo ; Reis, Ricardo ; Quinn, Heather M.

  • Author_Institution
    PGMICRO, UFRGS, Porto Alegre, Brazil
  • Volume
    62
  • Issue
    6
  • fYear
    2015
  • Firstpage
    3080
  • Lastpage
    3087
  • Abstract
    Radiation effects such as soft errors are the major threat to the reliability of SRAM-based FPGAs. This work analyzes the effectiveness in correcting soft errors of a novel scrubbing technique using internal frame redundancy called Frame-level Redundancy Scrubbing (FLR-scrubbing). This correction technique can be implemented in a coarse grain TMR design. The FLR-scrubbing technique was implemented on a mid-size Xilinx Virtex-5 FPGA device used as a case study. The FLR-scrubbing technique was tested under neutron radiation and fault injection. Implementation results demonstrated minimum area and energy consumption overhead when compared to other techniques. The time to repair the fault is also improved by using the Internal Configuration Access Port (ICAP). Neutron radiation test results demonstrated that the proposed technique is suitable for correcting accumulated SEUs and MBUs.
  • Keywords
    SRAM chips; failure analysis; field programmable gate arrays; radiation hardening (electronics); redundancy; semiconductor device reliability; semiconductor device testing; FLR-scrubbing technique; ICAP; MBU; SEU; SRAM based FPGA; TMR design; Xilinx Virtex-5 FPGA device; correction technique; fault injection; frame-level redundancy scrubbing technique; internal configuration access port; internal frame redundancy; multiple bit upset; neutron radiation test; single event upset; soft errors; Fault tolerance; Field programmable gate arrays; Radiation effects; Fault tolerance; field programmable gate arrays; radiation effects;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2015.2489601
  • Filename
    7348832