Title :
SEU and SET of 65 Bulk CMOS Flip-flops and Their Implications for RHBD
Author :
Yuanfu Zhao ; Liang Wang ; Suge Yue ; Dan Wang ; Xinyuan Zhao ; Yongshu Sun ; Dongqiang Li ; Fuqing Wang ; Xiaoqian Yang ; Hongchao Zheng ; Jianhua Ma ; Long Fan
Author_Institution :
Beijing Microelectron. Technol. Inst., Beijing, China
Abstract :
Two 65 nm bulk CMOS test chips, each containing several different types of flip-flop chains, are designed and tested. Heavy ion results are given and analyzed across ion LET and in proposed time domain. The single event upset (SEU) and single event transient (SET) performance of various DFFs are compared and discussed, concluding several practical implications for radiation hardening by design (RHBD). The effectiveness of redundant delay filter (RDF) on mitigating SETs is proven by experiment for the first time.
Keywords :
CMOS logic circuits; delay filters; flip-flops; integrated circuit design; integrated circuit reliability; integrated circuit testing; radiation hardening (electronics); CMOS flip-flops; CMOS test chips; RDF; RHBD; SET; SEU; heavy ion; ion LET; radiation hardening by design; redundant delay filter; single event transient; single event upset; size 65 nm; Flip-flops; Radiation hardening (electronics); Single event transients; Single event upsets; Time-domain analysis; Dual interlocked cell (DICE); flip-flop; radiation hardening by design (RHBD); redundant delay filter (RDF); single event transient (SET); single event upset (SEU); soft error; time domain analysis;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2015.2490552
