DocumentCode :
3611969
Title :
SEE on Different Layers of Stacked-SRAMs
Author :
Gupta, V. ; Bosser, A. ; Tsiligiannis, G. ; Rousselet, M. ; Mohammadzadeh, A. ; Javanainen, A. ; Virtanen, A. ; Puchner, H. ; Saigne, F. ; Wrobel, F. ; Dilillo, L.
Author_Institution :
Lab. d´Inf. de Robot. et de Microelectron. de Montpellier, Univ. de Montpellier II, Montpellier, France
Volume :
62
Issue :
6
fYear :
2015
Firstpage :
2673
Lastpage :
2678
Abstract :
This paper presents heavy-ion and proton radiation test results of a 90 nm COTS SRAM with stacked structure. Radiation tests were made using high penetration heavy-ion cocktails at the HIF (Belgium) and at RADEF (Finland) as well as low energy protons at RADEF. The heavy-ion SEU cross-section showed an unusual profile with a peak at the lowest LET (heavy-ion with the highest penetration range). The discrepancy is due to the fact that the SRAM is constituted of two vertically stacked dice. The impact of proton testing on the response of both stacked dice is presented. The results are discussed and the SEU cross-sections of the upper and lower layers are compared. The impact of the stacked structure on the proton SEE rate is investigated.
Keywords :
SRAM chips; ion beam effects; radiation hardening (electronics); SEE; heavy ion SEU cross section; heavy ion penetration; heavy ion radiation test; highest penetration; low energy protons; proton radiation test; size 90 nm; stacked SRAM layers; Proton radiation effects; Radiation effects; Random access memory; Single event upsets; 90 nm; SEE rate; SRAM; multiple cell upset (MCU); radiation testing; single event upset (SEU); stacked dice; static and dynamic mode testing;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2015.2496725
Filename :
7348951
Link To Document :
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