Title :
Charging efficiencies and heat resistance in three types of SiO2/Si3N4 electrets
Author :
Okubo, Norio ; Itoh, Taira ; Kidokoro, Kenichi ; Yasuno, Yoshinobu
Author_Institution :
Rion Co., Ltd., Tokyo, Japan
fDate :
12/1/2015 12:00:00 AM
Abstract :
Charging efficiencies and heat resistance of three types of silicon dioxide/silicon nitride double-layer electrets were investigated. These electrets were fabricated with SiO2 films deposited from SiH4 via plasma-enhanced chemical vapor deposition (PECVD SiO2) or with tetraethylorthosilicate (TEOS) using PECVD (TEOS SiO2) or were thermally grown SiO2. Electrets with thicker SiO2 films were found to have higher charging efficiencies and heat resistance than those with thinner SiO2 layers. Moreover, the expected lifetimes of the SiO2 electrets were significantly longer than that of a fluorinated ethylene propylene copolymer electret.
Keywords :
electrets; plasma CVD; semiconductor thin films; silicon compounds; PECVD; SiO2-Si3N4; TEOS; heat resistance; plasma-enhanced chemical vapor deposition; silicon dioxide-silicon nitride double-layer electret; tetraethylorthosilicate; Corona; Discharges (electric); Electrets; Films; Micromechanical devices; Resistance; Resistance heating; Electret; SiO2; plasma-enhanced chemical vapor deposition; tetraethylorthosilicate; thermal;
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
DOI :
10.1109/TDEI.2015.004918
