A Silicon-on-Thin-Buried-Oxide CMOS Microcontroller with Embedded Atom-Switch ROM

Author

Sakamoto, Toshitsugu ; Tsuji, Yukihide ; Tada, Munehiro ; Makiyama, Hideki ; Hasegawa, Takumi ; Yamamoto, Yoshiki ; Okanishi, Shinobu ; Maekawa, Keiichi ; Banno, Naoki ; Miyamura, Makoto ; Okamoto, Koichiro ; Iguchi, Noriyuki ; Oda, Hidekazu ; Kamohara, S

Volume

35

Issue

6

fYear

2015

Firstpage

13

Lastpage

23

Abstract

The authors demonstrate an ultra-low-power microcontroller unit (MCU) with an embedded atom-switch ROM, which performs 0.39-V operation voltage and 18.26-pJ/cycle minimum active energy (or 18.26-μW/MHz minimum active power) at 14.3 MHz. The MCU is fabricated using an embedded atom-switch process with a hybrid silicon-on-thin-buried-oxide (SOTB) core and bulk I/O transistors. The atom switch is suitable for an ultra-low-voltage operation because of its high on/off conductance ratio. The SOTB CMOS with a body-bias voltage control realizes a high operation frequency of 40 MHz at 0.54 V and an ultra-low sleep power of 0.628 μW, simultaneously.

Keywords

CMOS integrated circuits; elemental semiconductors; integrated circuit manufacture; low-power electronics; microcontrollers; read-only storage; silicon; MCU; bulk I/O transistors; embedded atom-switch ROM; frequency 14.3 MHz; frequency 40 MHz; power 0.628 muW; silicon-on-thin-buried-oxide CMOS microcontroller; ultra-low-power microcontroller unit; voltage 0.39 V; voltage 0.54 V; Microcontrollers; Random access memory; Read only memory; Silicon on insulator; Switches; Switching circuits; Threshold voltage; Transistors; MCU; SOI; atom switch; microcontroller unit; silicon on insulator; silicon-on-thin-buried-oxide;

fLanguage

English

Journal_Title

Micro, IEEE

Publisher

ieee

ISSN

0272-1732

Type

jour

DOI

10.1109/MM.2015.142

Filename

7368039