Title :
MRAM with improved magnetic tunnel junction material
Author :
H. Kano;K. Bessho;Y. Higo;K. Ohba;M. Hashimoto;T. Mizuguchi;M. Hosomi
Author_Institution :
CNC, Sony Corp., Yokohama, Japan
fDate :
6/24/1905 12:00:00 AM
Abstract :
Summary form only given. Increasing output and decreasing switching field distribution are very important for the development of magnetic tunnel junction (MTJ) materials, in order to achieve a high capacity MRAM. We introduce an amorphous MTJ material with excellent characteristics, which is evaluated through the MRAM/MTJ test element groups (TEG) with a MOS circuit.
Keywords :
"Magnetic tunneling","Tunneling magnetoresistance","Magnetic materials","Amorphous magnetic materials","Magnetic anisotropy","Annealing","Voltage","Thermal stability","Perpendicular magnetic anisotropy","Amorphous materials"
Conference_Titel :
Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International
Print_ISBN :
0-7803-7365-0
DOI :
10.1109/INTMAG.2002.1000779
