DocumentCode
3613434
Title
FDTD-SPICE analysis of high-speed cells in silicon integrated circuits
Author
N. Orhanovic;N. Matsui
Author_Institution
Appl. Simulation Technol., San Jose, CA, USA
fYear
2002
fDate
6/24/1905 12:00:00 AM
Firstpage
347
Lastpage
352
Abstract
Introduces FDTD-SPICE to the problem of silicon integrated circuit (IC) analysis. The analyzed IC cell is decomposed into active and passive parts. The active part is analyzed using the circuit analysis approach of SPICE while the larger passive on-chip interconnect part is analyzed using the full wave finite difference time domain (FDTD) method. The two methods are coupled in the time domain at the connecting ports. All of the modes propagating on the metal-insulator-semiconductor (MIS) interconnect are taken into account accurately. The advantages of both the circuit and the full wave analysis approaches are retained while avoiding inaccuracies associated with the use of transforms or inverse transforms. The analysis procedure is illustrated on a few small IC cell layout examples.
Keywords
"Silicon","High speed integrated circuits","Circuit analysis","Integrated circuit interconnections","Finite difference methods","Time domain analysis","SPICE","Coupling circuits","Joining processes","Metal-insulator structures"
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 2002. Proceedings. 52nd
ISSN
0569-5503
Print_ISBN
0-7803-7430-4
Type
conf
DOI
10.1109/ECTC.2002.1008119
Filename
1008119
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