Title :
(InGa)As/GaAs quantum-dot diode lasers for 1.3-/spl mu/m optical fibre communication
Author :
M. Wasiak;R.P. Sarzala;T. Czyszanowski;P. Mackowiak;W. Nakwaski;M. Bugajski
Author_Institution :
Inst. of Phys., Tech. Univ. Lodz, Poland
fDate :
6/24/1905 12:00:00 AM
Abstract :
The self-consistent optical-electrical-thermal-gain model of the oxide-confined edge-emitting diode laser has been used to simulate the room-temperature operation of the long-wavelength 1.3-/spl mu/m quantum-dot (InGa)As/GaAs diode laser. Validity of the model has been verified using some experimental results for comparison. An impact of quantum-dot density on laser operation characteristics as well as temperature dependence of lasing threshold have been discussed.
Keywords :
"Gallium arsenide","Quantum dots","Diode lasers","Optical fiber communication","Laser modes","Optical resonators","Optical refraction","Optical variables control","Fiber lasers","Semiconductor lasers"
Conference_Titel :
Transparent Optical Networks, 2002. Proceedings of the 2002 4th International Conference on
Print_ISBN :
0-7803-7375-8
DOI :
10.1109/ICTON.2002.1009531
