• DocumentCode
    3613512
  • Title

    Polar diagram of wet-etched [100] InP

  • Author

    P. Elias;I. Kostic;S. Hasenohrl

  • Author_Institution
    Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    229
  • Lastpage
    231
  • Abstract
    A modified wagon-wheel-mask technique was used to determine data for the reconstruction of a polar diagram of InP crystal wet etched in etchants based on HCl and H/sub 3/PO/sub 4/. It is demonstrated that the facet revelation and mask underetching within /spl plusmn/5/spl deg/ around [001] are very sensitive to the etchant composition as well as to mask orientation.
  • Keywords
    "Indium phosphide","Wet etching","Indium gallium arsenide","Crystallography","Strips","Molecular beam epitaxial growth","Shape","Crystalline materials","Topology","Informatics"
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-7320-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2002.1014334
  • Filename
    1014334
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3613512