• DocumentCode
    3613806
  • Title

    GaN MSM UV photodetectors

  • Author

    B. Boratynski;B. Paszkiewicz;M. Szreter

  • Author_Institution
    Fac. of Microsystem Electron. & Photonics, Wroclaw Univ. of Technol., Poland
  • Volume
    3
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    735
  • Abstract
    GaN Schottky diodes and MSM UV photodetectors were fabricated on GaN/sapphire substrates. Schottky contacts were characterized in a temperature range up to 250/spl deg/C above RT. The MSM photodetector response to 300 nm laser wavelength was measured. Output signal dependence on the detector bias was evaluated. The responsivity of 0.3 A/W was estimated.
  • Keywords
    "Gallium nitride","Photodetectors","Schottky barriers","Schottky diodes","Substrates","Detectors","Temperature measurement","Electrical resistance measurement","Optical materials","Ohmic contacts"
  • Publisher
    ieee
  • Conference_Titel
    Microwaves, Radar and Wireless Communications, 2002. MIKON-2002. 14th International Conference on
  • Print_ISBN
    83-906662-5-1
  • Type

    conf

  • DOI
    10.1109/MIKON.2002.1017947
  • Filename
    1017947
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3613806