Title :
GaN MSM UV photodetectors
Author :
B. Boratynski;B. Paszkiewicz;M. Szreter
Author_Institution :
Fac. of Microsystem Electron. & Photonics, Wroclaw Univ. of Technol., Poland
fDate :
6/24/1905 12:00:00 AM
Abstract :
GaN Schottky diodes and MSM UV photodetectors were fabricated on GaN/sapphire substrates. Schottky contacts were characterized in a temperature range up to 250/spl deg/C above RT. The MSM photodetector response to 300 nm laser wavelength was measured. Output signal dependence on the detector bias was evaluated. The responsivity of 0.3 A/W was estimated.
Keywords :
"Gallium nitride","Photodetectors","Schottky barriers","Schottky diodes","Substrates","Detectors","Temperature measurement","Electrical resistance measurement","Optical materials","Ohmic contacts"
Conference_Titel :
Microwaves, Radar and Wireless Communications, 2002. MIKON-2002. 14th International Conference on
Print_ISBN :
83-906662-5-1
DOI :
10.1109/MIKON.2002.1017947
