Title :
Experimental research of silicon flowmeters based on piezoresistance effect
Author :
V.A. Kolchuzhin;A.V. Nazin;A.V. Shaporin
Author_Institution :
Novosibirsk State Tech. Univ., Russia
fDate :
6/24/1905 12:00:00 AM
Abstract :
The experimental results are presented for silicon flowmeter in a range of gas range 20 - 1000 1/h.
Keywords :
"Silicon","Piezoresistance","Piezoresistive devices","Bridge circuits","Pollution measurement","Resistors","Temperature dependence","Temperature distribution","Semiconductor device measurement","Heating"
Conference_Titel :
Electron Devices and Materials, 2002. Proceedings. 3rd Annual 2002 Siberian Russian Workshop on
Print_ISBN :
5-7782-0380-2
DOI :
10.1109/SREDM.2002.1024321
