DocumentCode :
3613925
Title :
InP-based HEMTs with a cutoff frequency higher than 450 GHz
Author :
K. Shinohara;Y. Yamashita;A. Endoh;K. Hikosaka;T. Matsui;T. Mimura;S. Hiyamizu
Author_Institution :
Commun. Res. Lab., Tokyo, Japan
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
163
Lastpage :
166
Abstract :
InP-based InGaAs/InAlAs high electron mobility transistors (HEMTs) are currently the fastest transistors, and are one of the most promising devices that can operate in up to submillimeter-wave frequency range. In this paper the authors report an extremely high f/sub t/ of 472 GHz in 30-nm-gate lattice-matched InGaAs/InAlAs HEMTs achieved by shortening the lateral gate-recess while maintaining a short gate-to-channel distance. They also established that L/sub rd/ rather than the L/sub rs/ is more critical to higher f/sub t/ by using asymmetrically recessed-gate HEMTs. The results of Monte Carlo simulation clearly showed that the enhancement in electron overshoot velocity under the gate was due to the higher lateral electric field at the drain end of the gate for the HEMTs with a shorter L/sub gd/.This f/sub t/ is the highest value yet reported for any transistor.
Keywords :
"HEMTs","MODFETs","Cutoff frequency","Indium compounds","Fabrication","Indium gallium arsenide","Indium phosphide","Etching","Resists","Electrons"
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2002. 60th DRC. Conference Digest
Print_ISBN :
0-7803-7317-0
Type :
conf
DOI :
10.1109/DRC.2002.1029576
Filename :
1029576
Link To Document :
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