• DocumentCode
    3613944
  • Title

    A silicon-oxide-silicon nanogap device structure

  • Author

    P. Lundgren;S. Bengtsson

  • Author_Institution
    Solid State Electron. Lab., Chalmers Univ., Gothenburg, Sweden
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    201
  • Lastpage
    203
  • Abstract
    Nanogaps in the range 5-14 nm have been manufactured with a silicon-oxide-silicon structure and the electrical characteristics show low parasitic leakage currents and a high sensitivity to surface treatment.
  • Keywords
    "Nanostructures","Nanoscale devices","Doping","Silicon","Etching","Displays","Electric variables","Leakage current","Chemical elements","Contacts"
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on
  • Print_ISBN
    0-7803-7538-6
  • Type

    conf

  • DOI
    10.1109/NANO.2002.1032225
  • Filename
    1032225
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3613944