Title :
A silicon-oxide-silicon nanogap device structure
Author :
P. Lundgren;S. Bengtsson
Author_Institution :
Solid State Electron. Lab., Chalmers Univ., Gothenburg, Sweden
fDate :
6/24/1905 12:00:00 AM
Abstract :
Nanogaps in the range 5-14 nm have been manufactured with a silicon-oxide-silicon structure and the electrical characteristics show low parasitic leakage currents and a high sensitivity to surface treatment.
Keywords :
"Nanostructures","Nanoscale devices","Doping","Silicon","Etching","Displays","Electric variables","Leakage current","Chemical elements","Contacts"
Conference_Titel :
Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on
Print_ISBN :
0-7803-7538-6
DOI :
10.1109/NANO.2002.1032225
