• DocumentCode
    3614020
  • Title

    Analytical formulation and electrical measurements of self-heating in silicon BJT´s

  • Author

    N. Nenadovic;V. d´Alessandro;L.K. Nanver;N. Rinaldi;H. Schellevis;J.W. Slotboom

  • Author_Institution
    Lab. of ECTM, Delft Univ. of Technol., Netherlands
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    24
  • Lastpage
    27
  • Abstract
    A new analytical formulation of the temperature at thermal runaway in silicon BJT´s is presented and supported by measurements on a thermally very sensitive silicon-on-glass process. The linear relationship between V/sub BE/ and V/sub CB/ for a given collector current is used to define a straightforward method for electrically determining the biasing conditions at thermal runaway.
  • Keywords
    "Electric variables measurement","Thermal resistance","Temperature","Electrical resistance measurement","Bipolar transistors","Electric resistance","Laboratories","Silicon devices","Performance evaluation","Contacts"
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-7561-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.2002.1042879
  • Filename
    1042879
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3614020