DocumentCode
3614176
Title
A High Power 50GHz DDR IMPATT Oscillator with Low Side Band Noise
Author
Y. Hirachi;Y. Toyama;Y. Fukukawa;Y. Tokumitsu
fYear
1976
fDate
5/29/1905 12:00:00 AM
Firstpage
36
Lastpage
39
Abstract
Low-frequency instabilities in millimeter-wave Double-Drift-Region (DDR) IMPATT diodes are investigated and the oscillator circuit which suppresses low-frequency instabilities is developed. DDR IMPATT mounted in this circuit exhibited output powers 1.6W at 55.5 GHz with 11.5 percent efficiencies.
Keywords
"Oscillators","Diodes","Impedance","Frequency","Low-frequency noise","Coaxial components","Circuit noise","Power generation","Equations","Laboratories"
Publisher
ieee
Conference_Titel
Microwave Symposium, 1976 IEEE-MTT-S International
Type
conf
DOI
10.1109/MWSYM.1976.1123634
Filename
1123634
Link To Document