Title :
Light-trapping structures for multi-quantum well solar cells
Author :
D.B. Bushnell;K.W.J. Bamham;J.P. Connolly;N.J. Ekins-Daukes;R. Airey;G. Hill;J.S. Roberts
Author_Institution :
Blackett Lab., Imperial Coll. of Sci., Technol. & Medicine, London, UK
fDate :
6/24/1905 12:00:00 AM
Abstract :
Multi-quantum well (MQW) cells extend the absorption of bulk gallium arsenide cells to longer wavelengths, increasing short-circuit current and have been shown to exhibit a similar dark current to their p-i-n control cells. To complement the recent addition of rear surface mirrors, similar techniques to those employed in silicon cells may be used. These include the texturing of the front surface and use of diffraction gratings. Both are considered here and their effect upon the short-circuit current (J/sub sc/) calculated. Such techniques could allow the number of quantum wells to be reduced, improving the dark current of the cell.
Keywords :
"Photovoltaic cells","Dark current","Quantum well devices","Absorption","Gallium arsenide","PIN photodiodes","Mirrors","Silicon","Surface texture","Diffraction"
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190782