DocumentCode :
3614344
Title :
Light-trapping structures for multi-quantum well solar cells
Author :
D.B. Bushnell;K.W.J. Bamham;J.P. Connolly;N.J. Ekins-Daukes;R. Airey;G. Hill;J.S. Roberts
Author_Institution :
Blackett Lab., Imperial Coll. of Sci., Technol. & Medicine, London, UK
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
1035
Lastpage :
1038
Abstract :
Multi-quantum well (MQW) cells extend the absorption of bulk gallium arsenide cells to longer wavelengths, increasing short-circuit current and have been shown to exhibit a similar dark current to their p-i-n control cells. To complement the recent addition of rear surface mirrors, similar techniques to those employed in silicon cells may be used. These include the texturing of the front surface and use of diffraction gratings. Both are considered here and their effect upon the short-circuit current (J/sub sc/) calculated. Such techniques could allow the number of quantum wells to be reduced, improving the dark current of the cell.
Keywords :
"Photovoltaic cells","Dark current","Quantum well devices","Absorption","Gallium arsenide","PIN photodiodes","Mirrors","Silicon","Surface texture","Diffraction"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190782
Filename :
1190782
Link To Document :
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