DocumentCode :
3614429
Title :
Application of MEMS technologies to nanodevices
Author :
L. Doherty; Hongbing Liu;V. Milanovic
Author_Institution :
Berkeley Sensor & Actuator Center, California Univ., Berkeley, CA, USA
Volume :
3
fYear :
2003
fDate :
6/25/1905 12:00:00 AM
Abstract :
A process methodology enabling the fabrication of various nanodevices is demonstrated that is compatible with standard integrated circuit processes and recently developed MEMS technologies. The basic devices are laterally suspended single-crystal silicon nanowires with diameters from /spl sim/20 nm formed by a single DRIE etch step and oxidation thinning cycles. These nanowires can further serve as molds for conformal polysilicon and silicon nitride deposition, resulting in coaxial nanowires and fluidic devices such as nanocapillaries and nanopores with <100 nm inner diameters. The above nanodevices are being investigated for use in thermoelectric and biomedical applications as well as MEMS actuator integration.
Keywords :
"Micromechanical devices","Nanowires","Integrated circuit technology","Silicon","Fabrication","Standards development","Etching","Oxidation","Coaxial components","Nanoscale devices"
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2003. ISCAS ´03. Proceedings of the 2003 International Symposium on
Print_ISBN :
0-7803-7761-3
Type :
conf
DOI :
10.1109/ISCAS.2003.1205174
Filename :
1205174
Link To Document :
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