DocumentCode :
3614721
Title :
Indication of minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LT MBE GaAs interface
Author :
F. Dubecky;B. Zat´ko;C. Ferrari;V. Smatko;A. Forster;P. Kordos
Author_Institution :
Slovak Academy of Sciences
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
169
Lastpage :
172
Keywords :
"Gallium arsenide","Electrodes","Molecular beam epitaxial growth","Schottky barriers","Gamma ray detection","Gamma ray detectors","Radiation detectors","Temperature","Leakage current","Testing"
Publisher :
ieee
Conference_Titel :
Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. 12th International Conference on
Print_ISBN :
0-7803-7418-5
Type :
conf
DOI :
10.1109/SIM.2002.1242748
Filename :
1242748
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3614721
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