DocumentCode :
3614751
Title :
Control of charging in high aspect ratio plasma etching of integrated circuits
Author :
Z.L. Petrovic;T. Makabe
Author_Institution :
Inst. of Phys., Belgrade Univ., Serbia
Volume :
1
fYear :
2003
fDate :
6/25/1905 12:00:00 AM
Firstpage :
119
Abstract :
In this paper we discuss some recent studies on control of charging during plasma etching of silicon dioxide in integrated circuits. These are required to reduce the damage on the devices and allow further increase in speed and capacity of integrated circuits. Such possibilities have a bearing in development of telecommunications. In particular we discuss how properties of incoming ions, geometry of the nanostructure, aspect ratio and plasma properties affect the kinetics of charging.
Keywords :
"Plasma applications","Etching","Plasma properties","Plasma devices","Surface charging","Plasma chemistry","Integrated circuit technology","Breakdown voltage","Plasma materials processing","Telecommunication control"
Publisher :
ieee
Conference_Titel :
Telecommunications in Modern Satellite, Cable and Broadcasting Service, 2003. TELSIKS 2003. 6th International Conference on
Print_ISBN :
0-7803-7963-2
Type :
conf
DOI :
10.1109/TELSKS.2003.1246198
Filename :
1246198
Link To Document :
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