DocumentCode :
3614772
Title :
Microwave transistor noise models including temperature dependence
Author :
Z. Marinkovic;V. Markovic;A. Caddemi;B. Milovanovic
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
Volume :
2
fYear :
2003
fDate :
6/25/1905 12:00:00 AM
Firstpage :
561
Abstract :
This paper presents results of transistor noise parameters´ modeling including their temperature dependence. Transistor noise models based on multilayer perceptron neural networks are proposed. Using transistor noise data for certain number of temperatures, appropriate neural networks were trained. Once trained the developed model can be used for efficient prediction of transistor noise parameters for any operating temperature, avoiding additional measurements.
Keywords :
"Microwave transistors","Temperature dependence","Circuit noise","Neural networks","Multilayer perceptrons","Noise measurement","Frequency","Multi-layer neural network","Predictive models","Temperature measurement"
Publisher :
ieee
Conference_Titel :
Telecommunications in Modern Satellite, Cable and Broadcasting Service, 2003. TELSIKS 2003. 6th International Conference on
Print_ISBN :
0-7803-7963-2
Type :
conf
DOI :
10.1109/TELSKS.2003.1246288
Filename :
1246288
Link To Document :
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